List of Publications by Year
2012
A narrow-band 8.7GHz SiGe HBT LNA with a passive frequency selective feedback Gerlich, Stefan; Weger, Peter; reviewed, will be published in FREQUENZ (July/August 2012)
2010
Fully monolithically integrated X-band power amplifier without external matching Meshcheriakov, Ievgenii; Solomko, Valentyn A.; Weger, Peter; Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 18-21 July 2010, Berlin (corrected version)
2009
A Fully Integrated 3.3–3.8-GHz Power Amplifier With Autotransformer Balun Solomko, V.A.; Weger, P.; Microwave Theory and Techniques, IEEE Transactions on , vol.57, no.9, pp.2160-2172, Sept. 2009
2008
Monolithically integrated SD frequency synthesiser with distributed reference spurs Solomko, V.A.; Weger, P.; Circuits, Devices & Systems, IET , vol.2, no.6, pp.527-536, December 2008
Monolithically integrated Sigma-Delta Frequency Synthesizers in 0.13 µm CMOS Valentyn A. Solomko; PhD thesis, Chair of Circuit Design, Brandenburg University of Technology Cottbus, July 2008
2007
Multi-band adaptive WLAN receivers in 0.13 µm CMOS Debski, Wojciech Andrzej; PhD thesis, Chair of Circuit Design, Brandenburg University of Technology Cottbus, 2007
2006
17 GHz 50-60 mW Power Amplifiers in 0.13 µm standard CMOS Andriy V. Vasylyev, Peter Weger, Winfried Bakalski, and Werner Simburger; IEEE Microwave and Wireless Components Letters Volume 16, Issue 1, Jan. 2006
11 GHz CMOS ΣΔ frequency synthesiser Valentyn Solomko, Peter Weger; IEE Electronics Letters Volume 42, Issue 21, 12 Oct. 2006
Integrated RF power amplifier design in Silicon-based technologies Vasylyev, Andriy; PhD thesis, Chair of Circuit Design, Brandenburg University of Technology Cottbus, 2006
2005
A 4.8-6 GHz IEEE 802.11a WLAN SiGe-Bipolar Power Amplifier with On-chip Output Matching Winfried Bakalski, Andriy Vasylyev, Werner Simb.rger, Marcus K.ll, Alfons Schmid, and Krzysztof Kitlinski, Conference Proceedings of the 35th European Microwave Conference, October 2005
Ultra-broadband 20.5-31 GHz monolithically-integrated CMOS power amplifier A. Vasylyev, P. Weger, and W. Simburger, IEE Electronics Letters, vol. 41, no. 23, pp. 1281-1282, November 2005
Fully-integrated 32 dBm, 1.5-2.9 GHz SiGe-bipolar power amplifier using power-combining transformer Vasylyev, A.; Weger, P.; Bakalski, W.; Simburger, W.; Electronics Letters Volume 41, Issue 16, Pp:35 - 36; 04 August 2005
Keramische System-in-Package-Technologie fur 5GHz-Transceivermodul R.Matz, W.Debski, U.Langmann, P.Mayr, W.Simburger, S.Walter, P. Weger, C.Weyers; Deutsche IMAPS-Konferenz 2005, Munchen. 10-11 October 2005
2004
A Monolithic 2.4 GHz, 0.13 um CMOS Power Amplifier with 28 dBm Output Power and 48 % PAE at 1.2 V Suplly A. Vasylyev, P. Weger, W. Bakalski, R. Thueringer, W. Simbuerger, Microwave and Telecommunication Technology, 2004
- Voice transmission and data to high speed through the electric cables Reza, A.H. Digital Magazine of the Technologies of the information and the communications (TELEM@TICA) ISSN: 1729-3804. May. 2004 pp. 3-9
2003
60GHz and 76GHz oscillators in 0.25µm SiGe:C BiCMOS Winkler, W.; Borngraber, J.; Heinemann, B.; Weger, P.;Solid-State Circuits Conference, 2003
5-6.5 GHz LTCC power amplifier module with 0.3 W at 2.4 V in Si-bipolar Bakalski, W.; Ilkov, N.; Dernovsek, O.; Matz, R.; Simburger, W.; Weger, P.; Scholtz, A.L.;Electronics Letters Feb. 2003
A fully integrated 7-18 GHz power amplifier with on-chip output balun in 75 GHz-f/sub T/ SiGe-bipolar Bakalski, W.; Vasylyev, A.; Simburger, W.; Thuringer, R.; Wohlmuth, H.-D.; Scholtz, A.L.; Weger, P.;Bipolar/BiCMOS Circuits and Technology Meeting, Sep. 2003
- A 0.35µm CMOS 1.9mA VCO-Core with Off-Chip Inductance on LTCC for System-in-a-Package Solutions of a 5-GHz-WLAN Transceiver Mecking, S., Mayr, P., Debski, W., Walter, S., Matz, R., and Langmann, U; ProRISC 2003, 14th Annual Workshop, Veldhoven, Netherlands, Conf. Proceedings, pp. 240-243., 2003
- Internet and much more on the electric cable (PLC) Reza, A.H; Aguerrebere, E. Digital Magazine of the Technologies of the information and the communications (TELEM@TICA) ISSN: 1729-3804. Jan. 2003 pp. 3-6
A fully integrated 5.3 GHz, 2.4 V, 0.3 W SiGe-bipolar power amplifier with 50 Ohm output Bakalski, W.; Simbuerger, W.; Thueringer, R.; Vasylyev, A.; Scholtz, A.L., European Solid-State Circuits, Sept. 2003 pp. 561 - 564
2002
An integrated CMOS PLL for low-jitter applications Herzel, F.; Fischer, G.; Gustat, H.; Weger, P.;Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on [see also Circuits and Systems II: Express Briefs, IEEE Transactions on] Jun. 2002
2001
Integrated CMOS wideband oscillator for RF applications Herzel, F.; Erzgraber, H.; Weger, P.;Electronics Letters Mar. 2001
2000
Phase noise in a differential CMOS voltage-controlled oscillator for RF applications Herzel, F.; Pierschel, M.; Weger, P.; Tiebout, M.;Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on [see also Circuits and Systems II: Express Briefs, IEEE Transactions on] 2000
A monolithic 2.8 V, 3.2 W silicon bipolar power amplifier with 54% PAE at 900 MHz Heinz, A.; Simburger, W.; Wohlmuth, H.-D.; Weger, P.; Wilhelm, W.; Gabl, R.; Aufinger, K.;Radio Frequency Integrated Circuits (RFIC) Symposium, Jun. 2000
1999
A monolithic transformer coupled 5-W silicon power amplifier with 59% PAE at 0.9 GHz Simburger, W.; Wohlmuth, H.-D.; Weger, P.; Heinz, A.;Solid-State Circuits, Dec. 1999
A monolithic 3.7 W silicon power amplifier with 59% PAE at 0.9 GHz Simburger, W.; Wohlmuth, H.-D.; Weger, P.;Solid-State Circuits Conference, Feb. 1999
1997
1.6 watt 1.9 GHz power amplifier MMIC in silicon Trost, H.P.; Simburger, W.; Wohlmuth, H.D.; Knapp, H.; Weger, P.; Scholtz, A.L.;RF& Microwave Circuits for Commercial Wireless Applications Feb. 1997
1996
1.3 W 1.9 GHz and 1 W 2.4 GHz power amplifier MMIC in silicon Simburger, W.; Trost, H.P.; Wohlmuth, H.D.; Knapp, H.; Weger, P.;Electronics Letters Sep. 1996
1995
Parallel optical interconnection for uncoded data transmission with 1 Gb/s-per-channel capacity, high dynamic range, and low power consumption Karstensen, H.; Hanke, C.; Honsberg, M.; Kropp, J.-R.; Wieland, J.; Glaser, M.; Weger, P.; Popp, J.;Lightwave Technology, Jun. 1995
1994
Completely Integrated 1.5 Ghz Direct Conversion Transceiver Weger, P.; Simburger, W.; Knapp, H.; Leslie, T.C.; Rohringer, N.; Popp, J.; Schultes, G.; Scholtz, A.; Treitinger, L.;VLSI Circuits; Digest of Technical Papers., Jun. 1994
2V low-power bipolar logic Wilhelm, W.; Weger, P.;Solid-State Circuits Conference, 1994. Digest of Technical Papers. 41st ISSCC., Feb. 1994
A versatile Si-bipolar driver circuit with high output voltage swing for external and direct laser modulation in 10 Gb/s optical-fiber links Rein, H.-M.; Schmid, R.; Weger, P.; Smith, T.; Herzog, T.; Lachner, R.;Solid-State Circuits, Sep. 1994
Personal communications transceiver architectures for monolithic integration Bonek, E.; Schultes, G.; Kreuzgruber, P.; Simburger, W.; Weger, P.; Leslie, T.C.; Popp, J.; Knapp, H.; Rohringer, N.;Personal, Indoor and Mobile Radio Communications, 1994. Wireless Networks - Catching the Mobile Future. 5th IEEE International Symposium Sep. 1994
Parallel optical interconnect modules with multifiber connectors Karstensen, H.; Hanke, C.; Honsberg, M.; Kropp, J.; Wieland, J.; Blaser, M.; Weger, P.; Popp, L.;Electronic Components and Technology Conference, May. 1994
1991
Gilbert multiplier as an active mixer with conversion gain bandwidth of up to 17 GHz Weger, P.; Schultes, G.; Treitinger, L.; Bertagnolli, E.; Ehinger, K.;Electronics Letters Mar. 1991
A Si-bipolar 23 Gbit/s multiplexer and a 15 GHz 2:1 static frequency divider Felder, A.; Weger, P.; Bertagnolli, E.; Ehinger, K.; Hauenschild, J.; Rein, H.-M.;Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991 Sep. 1991
11 Gbit/s master-slave D flipflop IC in silicon bipolar technology Felder, A.; Weger, P.; Ehinger, K.; Treitinger, L.;Electronics Letters Feb. 1991
Process-optimization for sub-30 ps BiCMOS technologies for mixed ECL/CMOS applications Klose, H.; Kerber, M.; Meister, T.; Ohnemus, M.; Kopl, R.; Weger, P.; Weng, J.;Electron Devices Meeting, Dec. 1991
Silicon bipolar chipset with maximum data rates from 10 to 23 Gbit/s for optical communications Hauenschild, J.; Bertagnolli, E.; Felder, A.; Rein, H.-M.; Klose, H.; Schmidt, L.; Treitinger, L.; Weger, P.;Electronics Letters Dec. 1991
1990
Silicon bipolar circuits for gigahertz communication systems mixers, multipliers, modulators Weger, P.; Treitinger, L.; Bertagnolli, E.; Schultes, G.; Bonek, E.;Digital Communications, 1990. 'Electronic Circuits and Systems for Communications'. Proceedings., Mar. 1990
Versatile divider circuits up to 9 GHz input-frequency realised in high-speed BICMOS Weger, P.; Felder, A.; Kerber, M.; Klose, H.;Electronics Letters Nov. 1990
Basic performance of a direct conversion DECT receiver Schultes, G.; Bonek, E.; Weger, P.; Herzog, W.;Electronics Letters Oct. 1990
Silicon bipolar technology-a versatile base for high-speed communication circuits Treitinger, L.; Bertagnolli, E.; Ehinger, K.; Popp, J.; Reisch, M.; Kabza, H.; Schreiter, R.; Kerner, I.; Kopl, R.; Weidlich, H.; Weng, J.; Weger, P.; von Philipsborn, H.; Rein, H.M.;Digital Communications, 1990. 'Electronic Circuits and Systems for Communications'. Proceedings., Mar. 1990
1989
15 GHz static frequency-divider IC in silicon bipolar technology Weger, P.; Treitinger, L.; Bieger, J.; Rein, H.-M.;Electronics Letters Apr. 1989
10 Gbit/s monolithic integrated bipolar demultiplexer for optical-fibre transmission systems fabricated in BICMOS technology Hauenschild, J.; Rein, H.M.; Weger, P.; Klose, H.;Electronics Letters Jun. 1989
A 1-µm polysilicon self-aligning bipolar process for low-power high-speed integrated circuits Kabza, H.; Ehinger, K.; Meister, T.F.; Meul, H.-W.; Weger, P.; Kerner, I.; Miura-Mattausch, M.; Schreiter, R.; Hartwig, D.; Reisch, M.; Ohnemus, M.; Kopl, R.; Weng, J.; Klose, H.; Schaber, H.; Treitinger, L.;Electron Device Letters, IEEE Aug. 1989
Low cost and high performance BiCMOS processes: a comparison Klose, H.; Meister, T.; Hoffmann, B.; Pfaffel, B.; Weger, P.; Maier, I.;Bipolar Circuits and Technology Meeting, Sep. 1989